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微系统用高导热绝缘相变材料的制备与性能研究
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Abstract:
针对微系统发热量的热流密度已超过5 × 105 W/m2，造成功率芯片热流密度大、阵列芯片间温度差异大、温度波动大等问题，本文采用低温冷冻法在多孔氮化铝中填充正二十二烷制备复合相变材料。DSC测试表明相变温度在54℃左右，相变潜热在178 J/g左右，具有较高的相变温度、相变潜热，可以为微系统电子元器件的整体散热提供解决方案。
Since the heat flux of the microsystem has exceeded 5 × 105 W/m2, in order to solve the problems of high heat flux of the microsystem power chip, large temperature fluctuation and large temperature difference between the array chips, this paper adopts the cryogenic freezing method and fills n-docosane with porous aluminum nitride to prepare composite phase change materials. The DSC test shows that the phase transition temperature is about 54？C, and the latent heat of phase transition is about 178 J/g, which has a high phase transition temperature and latent heat, and can provide a solution for the overall heat dissipation of the electronic components of the microsystem.
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