纳秒–连续组合激光辐照硅基APD探测器电学参数变化研究
Study on the Change of Electrical Parameters of Silicon-Based APD Detector Irradiated by Nanosec-Continuous Laser Combination

硅基APD探测器是一种高灵敏度，适用于弱光探测的光电探测器，在激光对抗等领域广泛使用。本研究通过实验研究了纳秒–连续组合激光对硅基APD探测器的电学参数的影响，旨在为激光辐照光电探测器及光电对抗领域研究的发展提供理论指导和实验依据。实验使用1064 nm (波段内)的纳秒、连续双光束组合激光对硅基APD探测器进行了辐照。实验结果表明，随着连续激光功率密度的增加，硅基APD探测器的输出电流“平台期”增长，恢复时间增加，响应度和暗电流呈现出逐渐增加的拐点现象。通过计算发现硅基APD探测器受激光辐照后，实测的光谱响应度与实际的光谱响应度变化趋势相反，实际的光谱响应度会随着探测器损伤程度的加深而逐渐降低直至为0，此时的硅基APD探测器完全损伤。
Silicon-based APD detector is a kind of photodetector with high sensitivity and suitable for low light detection, which is widely used in laser countermeasures and other fields. The effect of nanosec-continuous laser on the electrical parameters of silicon-based APD detector was investigated experimentally in order to provide theoretical guidance and experimental basis for the development of laser irradiation photodetectors and photoelectric countermeasures. The silicon-based APD detector was irradiated by a nanosecond, continuous two-beam laser at 1064 nm (within the band). The experimental results show that with the increase of continuous laser power density, the output current “plateau period” increases, the recovery time increases, and the responsiveness and dark current show a gradually increasing inflection point phenomenon. Through calculation, it is found that after the silicon APD detector is irradiated by laser, the measured spectral responsivity is opposite to the actual spectral responsivity, and the actual spectral responsivity will gradually decrease with the increase of the detector damage degree until it reaches 0, at which time the silicon APD detector is completely damaged.