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基于钙钛矿光刻胶纳米复合材料的热光刻技术
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Abstract:
钙钛矿量子点因其具有高荧光发光效率、窄荧光发射峰、荧光发光波长可调控等一系列优良光学特性，被广泛应用在光电探测、照明显示、激光等领域。为了满足实现快速且简便地大面积制备钙钛矿发光器件的制备要求，提出并实现了一种基于掺杂CsPbBr3钙钛矿前驱体的含锆有机–无机光刻胶材料热光刻蚀技术。复合材料旋涂制成复合薄膜后，研究了温度对薄膜内钙钛矿前驱体形成发光量子点以及温度对薄膜材料折射率的影响，当温度从30℃到110℃不断升高时，钙钛矿前驱体逐渐结晶成发光量子点，在503 nm波长附近处出现窄带宽(半峰宽~25 nm)的优秀荧光效应；以及在波长范围438 nm~510 nm的可见光波段，实现最大0.014的折射率调制。最后，通过对复合薄膜材料进行掩膜紫外光刻，实现了厘米量级的钙钛矿量子点绿光发光带，证明了材料具有优异的光刻性能，为新一代发光器件提供一种材料与热光刻蚀技术方案。
Perovskite quantum dots have been widely applied in optoelectronic detection, illumination display, lasers, and other fields due to their high fluorescence luminous efficiency, narrow fluorescence emission peaks, and tunable fluorescence wavelengths, among a range of excellent optical characteristics. In order to meet the requirements of realizing fast and easy large-area fabrication of perovskite light-emitting devices, thermal-UV lithography of CsPbBr3 perovskite precursors doped nanocomposites photoresist was proposed and implemented. The temperature effect on the formation of luminescent quantum dots from the perovskite precursor in the spin-coated film and the refractive index of the film material were investigated, after the composite material is spin coated into a composite film. It can be found that as the temperature continuously increased from 30？C to 110？C, the perovskite precursor gradually crystallized into luminescent quantum dots, achieving an excellent fluorescence effect with a narrow bandwidth (FWHM~25 nm) near the wavelength of 503 nm and a maximum refractive index modulation of 0.014 in the visible light wavelength range of 438 nm~510 nm. Finally, centimeter level green light emission strips of perovskite quantum dots by the UV lithography of composite thin films were achieved. It proves that the material has excellent lithography performance, and provides a material and thermo-optical etching technology solution for a new generation of light-emitting devices.
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