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电子学报  2015 

一种基于0.18-μmCMOS工艺的新型超宽频带毫米波混频器设计与分析

DOI: 10.3969/j.issn.0372-2112.2015.02.031, PP. 405-411

Keywords: 分布式混频器,宽中频,栅注入混频器(GPM),功率合成,毫米波(MMW)

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Abstract:

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC0.18-μmCMOS工艺设计并制造,芯片总面积为1.67mm2.测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2dB至4dB,其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.

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