A boron-silicon film was formed from boron trichloride gas and
dichlorosilane gas at about 900℃ in ambient hydrogen at atmospheric pressure
utilizing a slim vertical cold wall chemical vapor deposition reactor designed
for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm
for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The
gas transport condition in the reactor was shown to quickly become stable when
evaluated by quartz crystal microbalances at the inlet and outlet. The
boron-silicon thin film was formed by achieving the various boron
concentrations of 0.16% - 80%, the depth profile of which was flat. By
observing the cross-sectional TEM image, the obtained film was dense. The boron
trichloride gas is expected to be useful for the quick fabrication of various
materials containing boron at significantly low and high concentrations.
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